Late news will be started from Feb 10th to Mar 10th. It has been set up in ePapers, and here is the link https://epapers2.org/ispsd2023/ESR/login.php?epsc=LN75$ Submission Deadline Mar 10, 2023 (23:59 PST)
ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices and power integrated circuits. ISPSD 2023 will be held in the city of Hong Kong, one of the most cosmopolitan, diverse, dynamic, and vibrant cities in Asia.
Topics of interest include but are not limited to:
High Voltage Power Devices
High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes
Low Voltage Power Devices and Power IC Technology
Low voltage silicon based discrete power devices (≤ 200V) and power devices for power ICs of all voltage ranges
Power IC Design
Circuit design and demonstration using power IC technology platform
GaN and Compound Materials
GaN and compound semiconductor materials (e.g., AlN, GaAs) based power devices, technology and integration, materials, and procesing
SiC and Other Materials
SiC and other materials (e.g., Ga2O3, diamond) based power devices, technology and integration, materials, and processing
Module and Packaging Technologies
Module and package technology for discrete power devices and power ICs
Important dates:
December 19, 2022
Abstract submission deadline
February 6, 2023
Author notification
March 10, 2023
Late news submission (limited acceptance)
March 24, 2023
Final manuscript submission deadline
General Chair
