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Call for Papers

ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices and power integrated circuits. ISPSD 2023 will be held in the city of Hong Kong, one of the most cosmopolitan, diverse, dynamic, and vibrant cities in Asia.

Topics of interest include but are not limited to:

High Voltage Power Devices

High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes

Low Voltage Power Devices and Power IC Technology

Low voltage silicon based discrete power devices (≤ 200V) and power devices for power ICs of all voltage ranges

Power IC Design

Circuit design and demonstration using power IC technology platform

GaN and Compound Materials

GaN and compound semiconductor materials (e.g., AlN, Ga2O3, GaAs) based power devices, technology and integration, materials, and procesing

SiC and Other Materials

SiC and other materials (e.g., diamond)  based power devices, technology and integration, materials, and processing

Module and Packaging Technologies

Module and package technology for discrete power devices and power ICs


Important dates:

Online submission will be open on 15th October 2022.

A PDF abstract should be submitted through the website including a single-page text summary in English and up to two additional pages of supporting figures.
https://ispsd2023.com/

December 12, 2022

Abstract submission deadline

February 6, 2023

Author notification

March 10, 2023

Late news submission (limited acceptance)

March 24, 2023

Final manuscript submission deadline

Prof. Kevin J. Chen Hong Kong University of Science and Technology Email: eekjchen@ust.hk

General Chair

Prof. Kevin J. Chen
Hong Kong University of Science and Technology
Email: eekjchen@ust.hk
Dr. Tom J.-L Tsai Taiwan Semiconductor Manufacturing Company Email: jltsay@tsmc.com

Technical Program Chair

Dr. Tom J.-L Tsai
Taiwan Semiconductor Manufacturing Company
Email: jltsay@tsmc.com