ISPSD is the premier forum for technical discussions in all areas of power semiconductor devices and power integrated circuits. ISPSD 2023 will be held in the city of Hong Kong, one of the most cosmopolitan, diverse, dynamic, and vibrant cities in Asia.
Topics of interest include but are not limited to:
High Voltage Power Devices
High voltage silicon based discrete devices (> 200 V) such as super junction MOSFETs, IGBTs, thyristors, GTOs and pn-diodes
Low Voltage Power Devices and Power IC Technology
Low voltage silicon based discrete power devices (≤ 200V) and power devices for power ICs of all voltage ranges
Power IC Design
Circuit design and demonstration using power IC technology platform
GaN and Compound Materials
GaN and compound semiconductor materials (e.g., AlN, Ga2O3, GaAs) based power devices, technology and integration, materials, and procesing
SiC and Other Materials
SiC and other materials (e.g., diamond) based power devices, technology and integration, materials, and processing
Module and Packaging Technologies
Module and package technology for discrete power devices and power ICs
Online submission will be open on 15th October 2022.
A PDF abstract should be submitted through the website including a single-page text summary in English and up to two additional pages of supporting figures.
December 12, 2022
Abstract submission deadline
February 6, 2023
March 10, 2023
Late news submission (limited acceptance)
March 24, 2023
Final manuscript submission deadline