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Committee Members

Organizing Committee

General Chair
Kevin J. CHEN
Hong Kong University of Science and Technology
Technical Program Chair
Tom TSAI
TSMC
Short Course Chair
Shu YANG
Zheijiang University
Publication Chairs
Chih-Fang HUANG
National Tsinghua University

Shu YANG
Zhejiang University
Publicity Chairs
Ian CHAN
Cyntec Co., Ltd.

Tanya TRAJKOVIC
Cambridge Microelectronics, Ltd.
Sponsorship/Exhibition Chair
Ziyang GAO
Hong Kong Applied Science and Technology Research Institute (ASTRI)
Treasurer
Yansong YANG
Hong Kong University of Science and Technology
Local Arrangement
Zheyang ZHENG
Hong Kong University of Science and Technology

Veronica CHENG
Jeta HK Co. Ltd.


Technical Program Committee

Technical Program Chair
Tom TSAI, TSMC

Category 1: High Voltage Power Devices (HV)

Chair
Fred FU, Xiinergy Systems, Inc.
Members
Chiara CORVASCE, Hitachi ABB Power Grids
Shigeto HONDA, Mitsubishi Electric Corporation
Noriyuki IWAMURO, University of Tsukuba
Yi TANG, Starpower Semiconductor
Tanya TRAJKOVIĆ, CAM MuTronics
Craig FISHER, MaxPower Semiconductor
Ming QIAO, University of Electronic Science and Technology of China
Kota Oi, Fuji Electric

Category 2: Low Voltage Devices and Power IC Technology (LVT)

Chair
Tatsuya NISHIWAKI, Toshiba Electronic Devices & Storage Corporation
Members
Riccardo DEPETRO, STMicroelectronics
Hiroki FUJII, Samsung Electronics
Mark GAJDA, Nexperia
Sang-Gi LEE, DB HiTek
Amit PAUL, ON Semiconductor
Kuo-Ming WU, TSMC
Katsumi EIKYU, Renesas Electronics Corp.
Xin LIN, NXP Semiconductors

Category 3: Power IC Design (ICD)

Chair
John PIGOTT, NXP Semiconductors
Members
Bruno ALLARD, INSA (+ Ampere Lab), Lyon
Laurent CHEVALIER, STMicroelectronics
Kenji HARA, Hitachi
Xin MING, University of Electronic Science and Technology of China
Weijia ZHANG, Analog Devices
Karthik JAYARAMAN, Renesas Electronics Corp.
Makoto TAKAMIYA, The University of Tokyo
Leon WANG, Omnivision Semiconductor

Category 4: GaN and Compound Materials: Device and technology (GaN)

Chair
Tomas PALACIOS, Massachusetts Institute of Technology
Members
Oliver HILT, Ferdinand-Braun-Institut, Berlin
Sameh KHALIL, Infineon Technologies
Elison MATIOLI, EPFL
Yoshinao MIURA, AIST
Hideyuki OKITA, Panasonic
Niels POSTHUMA, IMEC
Tom TSAI, TSMC
Grace XING, Cornell University
Shu YANG, Zhejiang University
Roy K.-Y. WONG, InnoScience
Hong ZHOU, Xidian University

Category 5: SiC and Other Materials (SiC)

Chair
Sei-Hyung RYU, Wolfspeed
Members
Song BAI, Nanjing Electronic Device Institute
Alexander BOLOTNIKOV, ON Semiconductor
Ulrike GROSSNER, ETH
Hiroshi KONO, Toshiba Electronic Devices & Storage Corporation
Naruhisa MIURA, Mitsubishi Electric Corporation
Dethard PETERS, Infineon Technologies
Siddarth SUNDARESAN, GeneSiC
Woongje SUNG, SUNY Polytechnic Institute
Yuichi ONOZAWA, Fuji Electric
Shinsuke HARADA, AIST
Chih-Fang HUANG, National Tsing Hua University
Cheng-Tyng YEN, Fast SiC Semiconductor Inc.

Category 6: Module and Package Technologies (PK)

Chair
Alberto CASTELLAZZI, Kyoto University of Advanced Science
Members
Wei-Chung LO, Industrial Technology Research Institute
Bassem MOUAWAD, Nottingham University
Ichiro OMURA, Kyushu Institute of Technology
Yang XU, Tesla
Emre GURPINAR, Sikorsky Innovations
Stefan OEHLING, Semikron-Danfoss
Antonio Pio CATALANO, University of Naples